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IR reveals plastic HEXFET power MOSFET
International Rectifier used the Convergence 2000 venue to launch what it calls the "first commercially available" HEXFET power MOSFET with a maximum temperature rating of 200^C in a TO-220 package. The IRF1704 is a rugged, low-RDS(on) device manufactured with IR's stripe planar technology, and is suitable for use in applications including electric power steering (EPS), electrohydraulic power-assisted steering (EHPAS), electric braking, and electric valve operation, as well as window lift control, wiper motor, and fuel and water pump control circuits. Since ambient temperatures in automotive under-hood applications reach as high as 135^C, device specifications are becoming increasingly stringent, according to the company. The industry-standard range of automotive MOSFETs is rated for 175^C Tj max, while the IRF1704 is rated at 200^C. At high ambient temperatures, it can carry up to 20% more current than similar devices in the same outline. "While all applications can benefit from devices with a higher junction operating temperature, the automotive industry has a more obvious and compelling need for high-temperature MOSFETs," said Gordon Gray, Technical Marketing Manager for the Automotive Group at IR. "For example, overload capability over a sustained period is extremely important when the 'park cycle' could be a few minutes in systems such as EPS and EHPAS. The IRF1704 can increase safety, reliability, and overload survivability in under-hood applications." Patrick Ponticel |

